The instability of a-Si:H TFT under mechanical strain with high frequency ac bias stress

M. C. Wang*, T. C. Chang, Po-Tsun Liu, S. W. Tsao, Y. P. Lin, J. R. Chen

*此作品的通信作者

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The instability of amorphous Si thin film transistors under uniaxial strain has been studied. Compared to the effect of tensile bias stress, larger threshold voltage (Vtha) shift is observed under compressive bias stress. These results are related to the damage of weak Si-Si bonds during the ac bias stress. However, the Vth shift of devices on the re-flattened substrate is larger after tensile strain than that of compressive strain. In addition, the defeat diminished effect of tensile situation is decreased after re-flattening the device. Therefore, after re-flattening the substrate the Vth shift resulting from tensile bias stress is larger than that of the compressive one.

原文English
頁(從 - 到) J113-J116
頁數4
期刊Electrochemical and Solid-State Letters
10
發行號10
DOIs
出版狀態Published - 19 7月 2007

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