The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs

Chin Yuan Hsu*, Wen How Lan, Yew-Chuhg Wu

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide-based (ITO-based) p contacts. The current-voltage characteristics and life tests of GaN-based LEDs have been studied. LED life tests showed that a pure ITO contact layer had poor reliability at high current stress. We also found that the GaN-based LED could achieve good reliability with a NiO/ITO contact layer. Using transmission electron microscopy and energy-dispersive X-ray spectrometer analyses, we observed In-contained metallic interface between the p-GaN layer and the pure ITO contact layer after annealing at 600°C. It revealed that ITO would react at interface or indiffuse near the interface at 600°C. The LED was degraded with unstable interfaces after life tests (stressed by a 50-mA current injection). To improve the reliability of GaN-based LEDs with the ITO contact layer, we suggest that the NiO layer be used to prevent the reaction and block the leakage pathway.

原文English
期刊Journal of the Electrochemical Society
153
發行號5
DOIs
出版狀態Published - 17 4月 2006

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