The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes
- Tien Yu Wang
- , Wei Chih Lai*
- , Qiao Ju Xie
- , Shun Hao Yang
- , Sheng Po Chang
- , Cheng Huang Kuo
- , Jinn Kong Sheu
*此作品的通信作者
研究成果: Article › 同行評審
4
引文
斯高帕斯（Scopus）