摘要
The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as surface roughness and defects. The light output power enhancement could reach 83% when the AlGaN barrier growth rate was reduced from 900 nm h−1 to 200 nm h−1. In addition to the light output power enhancement, lowering the AlGaN barrier growth rate altered the far-field emission patterns of the DUV LEDs and increased the degree of polarization in the DUV LEDs. The enhanced transverse electric polarized emission indicates that the strain in AlGaN/AlGaN MQWs was modified by lowering the AlGaN barrier growth rate.
原文 | English |
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頁(從 - 到) | 5437-5443 |
頁數 | 7 |
期刊 | RSC Advances |
卷 | 13 |
發行號 | 8 |
DOIs | |
出版狀態 | Published - 13 2月 2023 |