The influence of the preheating temperature of the (−2 0 1) β-ga2o3 substrates on c-plane gan epitaxial growth

Yu Pin Lan*

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor deposition method. The results show that high-temperature preheating (>500C) can modify the surface morphology of the substrate so that the crystalline quality of the grown GaN layer can be improved. With higher preheated temperatures, the grown GaN layer reveals smaller FWHM (full width at half-maximum) of the X-ray rocking curve. In addition, we find that the photoluminescence spectra of the GaN layers reveal their narrowest linewidth at a preheated temperature of 800C. These results support improvements of crystalline quality and provide optimization of a c-GaN grown epitaxially on the preheated (−2 0 1) β-Ga2O3 substrates for further device fabrication.

原文English
文章編號824
頁(從 - 到)1-11
頁數11
期刊Coatings
11
發行號7
DOIs
出版狀態Published - 7月 2021

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