The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

M. P. Houng, Y. H. Wang, C. L. Shen, Jenn-Fang Chen, A. Y. Cho

研究成果: Conference contribution同行評審

摘要

The authors have demonstrated a novel resonant interband tunneling device with GaSb/AlSb/InAs/GaSb/AlSb/InAs structures. It is found that InAs well thicknesses have a significant influence on the I-V characteristics of this device. The incorporation of an InAs layer in the well region will promote a peak-to-valley ratio of 20 at 300 K, nearly five times larger than that of the primitive one. Furthermore, multiple negative differential resistance behavior was obtained with InAs well thicknesses were in the range of 120 A to 300 A. Otherwise, single negative resistance is obtained. The significant influence of the added InAs layer on the electrical performance of the corresponding structure is found to be due to the electron-light hole coupling effect.

原文English
主出版物標題International Electron Devices Meeting 1991, IEDM 1991
發行者Institute of Electrical and Electronics Engineers Inc.
頁面817-820
頁數4
ISBN(電子)0780302435
DOIs
出版狀態Published - 1991
事件International Electron Devices Meeting, IEDM 1991 - Washington, United States
持續時間: 8 12月 199111 12月 1991

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
1991-January
ISSN(列印)0163-1918

Conference

ConferenceInternational Electron Devices Meeting, IEDM 1991
國家/地區United States
城市Washington
期間8/12/9111/12/91

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