The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

Ruofan Fu, Jianwen Yang, Wei Chiao Chang, Wei Cheng Chang, Chien Min Chang, Dong Lin, Qun Zhang*, Po-Tsun Liu, Han Ping D. Shieh

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm 2 V −1 s −1 at 300 °C, along with an on/off current ratio of 1.6 × 10 8 . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.

原文English
文章編號1700785
期刊Physica Status Solidi (A) Applications and Materials Science
215
發行號6
DOIs
出版狀態Published - 21 3月 2018

指紋

深入研究「The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors」主題。共同形成了獨特的指紋。

引用此