The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

Ruofan Fu; Jianwen Yang; Wei Chiao Chang; Wei Cheng Chang; Chien Min Chang; Dong Lin; Qun Zhang; Po-Tsun Liu; Han Ping D. Shieh

doi:10.1002/pssa.201700785

The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

Ruofan Fu, Jianwen Yang, Wei Chiao Chang, Wei Cheng Chang, Chien Min Chang, Dong Lin, Qun Zhang^*, Po-Tsun Liu, Han Ping D. Shieh

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光電工程學系

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摘要

In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm ² V ⁻¹ s ⁻¹ at 300 °C, along with an on/off current ratio of 1.6 × 10 ⁸ . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.

原文	English
文章編號	1700785
期刊	Physica Status Solidi (A) Applications and Materials Science
卷	215
發行號	6
DOIs	https://doi.org/10.1002/pssa.201700785
出版狀態	Published - 21 3月 2018

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10.1002/pssa.201700785

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title = "The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors",

abstract = " In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm 2 V −1 s −1 at 300 °C, along with an on/off current ratio of 1.6 × 10 8 . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs. ",

keywords = "annealing, indium-zinc-tungsten-oxide, positive bias stress, thin-film transistors",

author = "Ruofan Fu and Jianwen Yang and Chang, {Wei Chiao} and Chang, {Wei Cheng} and Chang, {Chien Min} and Dong Lin and Qun Zhang and Po-Tsun Liu and Shieh, {Han Ping D.}",

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AU - Fu, Ruofan

AU - Yang, Jianwen

AU - Chang, Wei Chiao

AU - Chang, Wei Cheng

AU - Chang, Chien Min

AU - Lin, Dong

AU - Zhang, Qun

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D.

PY - 2018/3/21

Y1 - 2018/3/21

N2 - In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm 2 V −1 s −1 at 300 °C, along with an on/off current ratio of 1.6 × 10 8 . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.

AB - In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm 2 V −1 s −1 at 300 °C, along with an on/off current ratio of 1.6 × 10 8 . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.

KW - annealing

KW - indium-zinc-tungsten-oxide

KW - positive bias stress

KW - thin-film transistors

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The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

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