The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration

Ping Hsun Chiu, Yi Fan Tsao, Heng Tung Hsu*

*此作品的通信作者

研究成果: Article › 同行評審

4 引文 斯高帕斯（Scopus）

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Keyphrases

Material Science

Engineering