The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration

The linearity performance of the AlGaN/GaN high-electron-mobility-transistors (HEMTs) is critical for circuit applications especially at millimeter-wave frequencies. In this paper, we propose a new dual-gate (DG) configuration for linearity improvement at millimeter-wave frequencies. Using 2D simulation, we observed the improvement in device linearity by placing the additional DC gate in the source-gate access region. Adjusting the bias voltage of the DC gate modulates the horizontal electric field in the channel and controls the acceleration behavior of the channel electrons. Furthermore, such bias adjustment enhances the electron density in the channel to compensate for the transconductance (G_m) degradation. Both of these contribute to the flattening of the G_m profile for linearity improvement. The proposed DG configuration improves the C/I ratio by 10 dB compared to the conventional single gate (SG) device at 38 GHz. Additionally, a 60 % improvement in the cutoff frequency (f_T) and maximum oscillation frequency (f_max) is obtained compared to the traditional DG configuration where the second gate is placed in the gate-drain drift region. This is mainly due to the reduction in gate capacitances from the redistribution of the electrons in the device. Such superior characteristics have shown great potential of the proposed device for high linearity applications at millimeter-wave frequencies.