The improved photosensitivity of amorphous In-Ga-Zn-O TFTs with gap-type structure

Po Chun Chan; Ya-Hsiang Tai; Han Wen Liu

doi:10.1002/sdtp.12098

The improved photosensitivity of amorphous In-Ga-Zn-O TFTs with gap-type structure

Po Chun Chan, Ya-Hsiang Tai, Han Wen Liu

光電工程學系

研究成果: Conference article › 同行評審

摘要

The photosensitivity of gap-gate type amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under visible light has been studied. With the very same process, the gap-type TFTs can be made into sensing array with the conventional ones. As a sensing device, the high ratio of photo and dark current and the steady leakage current provide the better signal to noise.

原文	English
頁（從 - 到）	1197-1200
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	49
發行號	1
DOIs	https://doi.org/10.1002/sdtp.12098
出版狀態	Published - 2018
事件	SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, 美國持續時間: 20 5月 2018 → 25 5月 2018

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10.1002/sdtp.12098

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title = "The improved photosensitivity of amorphous In-Ga-Zn-O TFTs with gap-type structure",

abstract = "The photosensitivity of gap-gate type amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under visible light has been studied. With the very same process, the gap-type TFTs can be made into sensing array with the conventional ones. As a sensing device, the high ratio of photo and dark current and the steady leakage current provide the better signal to noise.",

keywords = "Amorphous Indium Gallium Zinc Oxide (a-IGZO), Gap-type Structure, Light Sensor, Thin Film Transistors (TFT)",

author = "Chan, {Po Chun} and Ya-Hsiang Tai and Liu, {Han Wen}",

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N2 - The photosensitivity of gap-gate type amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under visible light has been studied. With the very same process, the gap-type TFTs can be made into sensing array with the conventional ones. As a sensing device, the high ratio of photo and dark current and the steady leakage current provide the better signal to noise.

AB - The photosensitivity of gap-gate type amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under visible light has been studied. With the very same process, the gap-type TFTs can be made into sensing array with the conventional ones. As a sensing device, the high ratio of photo and dark current and the steady leakage current provide the better signal to noise.

KW - Amorphous Indium Gallium Zinc Oxide (a-IGZO)

KW - Gap-type Structure

KW - Light Sensor

KW - Thin Film Transistors (TFT)

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JO - Digest of Technical Papers - SID International Symposium

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IS - 1

T2 - SID Symposium, Seminar, and Exhibition 2018, Display Week 2018

Y2 - 20 May 2018 through 25 May 2018

ER -

The improved photosensitivity of amorphous In-Ga-Zn-O TFTs with gap-type structure

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