The improved photosensitivity of amorphous In-Ga-Zn-O TFTs with gap-type structure

Po Chun Chan, Ya-Hsiang Tai, Han Wen Liu

研究成果: Conference article同行評審

摘要

The photosensitivity of gap-gate type amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under visible light has been studied. With the very same process, the gap-type TFTs can be made into sensing array with the conventional ones. As a sensing device, the high ratio of photo and dark current and the steady leakage current provide the better signal to noise.

原文English
頁(從 - 到)1197-1200
頁數4
期刊Digest of Technical Papers - SID International Symposium
49
發行號1
DOIs
出版狀態Published - 1 1月 2018
事件SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
持續時間: 20 5月 201825 5月 2018

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