The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

Kuo Liang Yeh*, Wei Lun Hong, Jyh-Chyurn Guo

*此作品的通信作者

    研究成果: Conference contribution同行評審

    摘要

    The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μeff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.

    原文English
    主出版物標題2010 IEEE MTT-S International Microwave Symposium, MTT 2010
    頁面316-319
    頁數4
    DOIs
    出版狀態Published - 15 10月 2010
    事件2010 IEEE MTT-S International Microwave Symposium, MTT 2010 - Anaheim, CA, United States
    持續時間: 23 5月 201028 5月 2010

    出版系列

    名字IEEE MTT-S International Microwave Symposium Digest
    ISSN(列印)0149-645X

    Conference

    Conference2010 IEEE MTT-S International Microwave Symposium, MTT 2010
    國家/地區United States
    城市Anaheim, CA
    期間23/05/1028/05/10

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