The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μeff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.