The impact of uniaxial strain on flicker noise and random telegraph noise of SiC strained nMOSFETs in 40nm CMOS technology

Kuo Liang Yeh*, Chih Shiang Chang, Jyh-Chyurn Guo

*此作品的通信作者

    研究成果: Conference contribution同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    The impact of uniaxial strain on flicker noise and random telegraph noise (RTN) was investigated in frequency and time domains, respectively. Both control and SiC strained nMOS reveal flicker noise dominated by number fluctuation model but the latter one with uniaxial strain suffers significantly higher noise. RTN measured from SiC strained nMOS features a complex spectrum with multi-level drain current fluctuation amplitudes. The capture time (τ c ), emission time (τ e ), and effective trap depth (Z eff ) can be extracted to explore the impact from the uniaxial strain on trap properties, RTN, and flicker noise.

    原文English
    主出版物標題European Microwave Week 2011
    主出版物子標題"Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
    頁面73-76
    頁數4
    出版狀態Published - 10 10月 2011
    事件14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - Manchester, United Kingdom
    持續時間: 10 10月 201111 10月 2011

    出版系列

    名字European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011

    Conference

    Conference14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
    國家/地區United Kingdom
    城市Manchester
    期間10/10/1111/10/11

    指紋

    深入研究「The impact of uniaxial strain on flicker noise and random telegraph noise of SiC strained nMOSFETs in 40nm CMOS technology」主題。共同形成了獨特的指紋。

    引用此