The impact of uni-axial strain on low frequency noise in nanoscale p-Channel metal-oxide-semiconductor field effect transistors under dynamic body biases

Kuo Liang Yeh*, Chih You Ku, Jyh-Chyurn Guo

*此作品的通信作者

    研究成果: Article同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    The impact of local strain on low frequency noise (LFN) in p-channel metal-oxide-semiconductor field effect transistor (pMOSFET) is investigated under dynamic body biases. For 60nm pMOSFET, the uni-axial compressive strain from embedded SiGe (e-SiGe) in source/drain can contribute 75% effective mobility (μeff) enhancement and the proportional improvement in current (IDS) as well as transconductance (Gm). However, the strained pMOSFET suffer more than 80% higher LFN (SID/I D2) compared with the control pMOSFET free from strain engineering. The measured LFN can be consistently explained by mobility fluctuation model and the increase of Hooge parameter (μH) appears as a key factor responsible for the higher LFN in strained pMOSFET. Forward body biases (FBB) is proposed as an effective method adapted to nanoscale devices for improving μeff and suppressing LFN, without resort to strain engineering.

    原文English
    文章編號084201
    期刊Japanese Journal of Applied Physics
    49
    發行號8 PART 1
    DOIs
    出版狀態Published - 1 8月 2010

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