The impact of narrow width effects on high frequency performance and noise in 35nm multi-finger n-MOSFETs

Kuo Liang Yeh, Chih Shiang Chang, Jyh-Chyurn Guo*

*此作品的通信作者

    研究成果: Conference contribution同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    The impact of narrow width effects on high frequency performance parameters like f T , f MAX , and RF noise in 35nm multi-finger n-MOSFETs is investigated in this paper. Multi-OD devices with extremely narrow width and fixed finger number (N F ) reveal higher R g and C gg , which lead to the penalty in f T , f MAX , and NF min . On the other hand, narrow-OD MOSFET with larger N F can yield lower R g and higher f MAX . However, these narrow-OD devices even with lower R g suffer lower f T and higher NF min . The mechanisms responsible for narrow width effects on f T , f MAX , and noise parameters will be addressed to provide an important guideline of MOSFET layout for RF circuits design using nanoscale CMOS technology.

    原文English
    主出版物標題2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers
    頁面355-358
    頁數4
    DOIs
    出版狀態Published - 28 9月 2012
    事件2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Montreal, QC, Canada
    持續時間: 17 6月 201219 6月 2012

    出版系列

    名字Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
    ISSN(列印)1529-2517

    Conference

    Conference2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012
    國家/地區Canada
    城市Montreal, QC
    期間17/06/1219/06/12

    指紋

    深入研究「The impact of narrow width effects on high frequency performance and noise in 35nm multi-finger n-MOSFETs」主題。共同形成了獨特的指紋。

    引用此