The impact of layout dependent stress and gate resistance on high frequency performance and noise in multifinger and donut MOSFETs

Chih You Ku, Kuo Ling Yeh, Jyh-Chyurn Guo*

*此作品的通信作者

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

The impact of STI stress on mobility and resulted transconductance (g m) degradation appear as a penalty of multi-finger devices for RF and analog design. Donut device layout is proposed to eliminate the STI transverse stress and achieve higher gm. Both NMOS and PMOS can benefit from the donut layout, with higher cut-off frequency (fT). However, the layout dependence of gm and gate resistance (Rg) becomes a critical trade-off in determining high frequency performance other than f T, such as maximum oscillation frequency (fmax) and RF noise. In this paper, a comparison between multi-finger and donut MOSFETs in terms of fT, fmax, and NFmin can provide a useful guideline of device layout for RF design using nanoscale CMOS technology.

原文English
主出版物標題2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
出版狀態Published - 1 12月 2013
事件2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
持續時間: 2 6月 20137 6月 2013

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
ISSN(列印)0149-645X

Conference

Conference2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
國家/地區United States
城市Seattle, WA
期間2/06/137/06/13

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