The impact of layout-dependent STI stress and effective width on low-frequency noise and high-frequency performance in nanoscale nMOSFETs

Kuo Liang Yeh*, Jyh-Chyurn Guo

*此作品的通信作者

    研究成果: Article同行評審

    10 引文 斯高帕斯(Scopus)

    摘要

    The impact of channel width scaling on low-frequency noise (LFN) and high-frequency performance in multifinger MOSFETs is reported in this paper. The compressive stress from shallow trench isolation (STI) cannot explain the lower LFN in extremely narrow devices. STI top corner rounding (TCR)-induced Δ W is identified as an important factor that is responsible for the increase in transconductance Gm and the reduction in LFN with width scaling to nanoscale regime. A semi-empirical model was derived to simulate the effective mobility (μeff) degradation from STI stress and the increase in effective width (Weff) from ΔW due to STI TCR. The proposed model can accurately predict width scaling effect on Gm based on a tradeoff between μeff and Weff. The enhanced STI stress may lead to an increase in interface traps density (Nit), but the influence is relatively minor and can be compensated by the Weff effect. Unfortunately, the extremely narrow devices suffer fT degradation due to an increase in Cgg. The investigation of impact from width scaling on μeff, Gm, and LFN, as well as the tradeoff between LFN and high-frequency performance, provides an important layout guideline for analog and RF circuit design.

    原文English
    文章編號5594629
    頁(從 - 到)3092-3100
    頁數9
    期刊IEEE Transactions on Electron Devices
    57
    發行號11
    DOIs
    出版狀態Published - 1 11月 2010

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