@inproceedings{62173176aba34bd18095fe108d3e397f,
title = "The impact of inner pickup on ESD robustness of multi-finger NMOS in nanoscale CMOS technology",
abstract = "The impact of pickup structure on ESD robustness of multi-finger MOSFET devices in the nanoscale CMOS process is investigated in this work with 1.2-V and 2.5-V devices in a 130-nm CMOS process. The multi-finger MOSFET device without the pickup structure inserted into its source region can sustain a much higher ESD level and more compact layout area for I/O cells.",
keywords = "Electrostatic discharge (ESD), Layout, Multi-finger MOSFET, Pickup structure",
author = "Ming-Dou Ker and Hsu, {Hsin Chyh}",
year = "2006",
doi = "10.1109/RELPHY.2006.251297",
language = "English",
isbn = "0780394992",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "631--632",
booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",
note = "44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 ; Conference date: 26-03-2006 Through 30-03-2006",
}