The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy

S. D. Hersee; P. A. Martin; Albert Chin; J. M. Ballingall

doi:10.1063/1.349608

The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy

S. D. Hersee^*, P. A. Martin, Albert Chin, J. M. Ballingall

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電子研究所

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11 引文斯高帕斯（Scopus）

摘要

The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (N_a - N _d = 4 × 10¹⁵ cm^-3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.

原文	English
頁（從 - 到）	973-976
頁數	4
期刊	Journal of Applied Physics
卷	70
發行號	2
DOIs	https://doi.org/10.1063/1.349608
出版狀態	Published - 1991

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abstract = "The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na - N d = 4 × 1015 cm-3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.",

author = "Hersee, {S. D.} and Martin, {P. A.} and Albert Chin and Ballingall, {J. M.}",

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AU - Martin, P. A.

AU - Chin, Albert

AU - Ballingall, J. M.

PY - 1991

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N2 - The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na - N d = 4 × 1015 cm-3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.

AB - The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na - N d = 4 × 1015 cm-3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.

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ER -

The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy

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