The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy

S. D. Hersee*, P. A. Martin, Albert Chin, J. M. Ballingall

*此作品的通信作者

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11 引文 斯高帕斯(Scopus)

摘要

The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na - N d = 4 × 1015 cm-3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.

原文English
頁(從 - 到)973-976
頁數4
期刊Journal of Applied Physics
70
發行號2
DOIs
出版狀態Published - 1991

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