The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN

Cheng Hung Shih*, Ikai Lo, Shuo Ting You, Cheng Da Tsai, Bae Heng Tseng, Yun Feng Chen, Chiao Hsin Chen, Chuo Han Lee, Wei-I Lee, Gary Z.L. Hsu

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (0001) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications.

原文English
文章編號127120
期刊AIP Advances
4
發行號12
DOIs
出版狀態Published - 1 12月 2014

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