The formation of smooth facets on wet-etched patterned sapphire substrate

Yu Chung Chen, Bo Wen Lin, Wen Ching Hsu, Yew-Chuhg Wu

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

In this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B1,B2,D1,D and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were {1347}, {1014} and {1235}, respectively. On the other hand, the surfaces of Bi ,B2,Di and D2-facets were not smooth, with some ambiguous stripes, which were investigated by using "zigzag triangle" hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets.

原文English
頁(從 - 到)R5-R8
期刊ECS Journal of Solid State Science and Technology
3
發行號2
DOIs
出版狀態Published - 2014

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