TY - GEN
T1 - The Extension of the FinFET Generation Towards Sub-3nm
T2 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
AU - Chung, Steve S.
AU - Chiang, C. K.
AU - Pai, H.
AU - Hsieh, E. R.
AU - Guo, J. C.
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Further improvement of FinFET has been demonstrated in the extension of the Moore's Law toward N3 technology and beyond. In the width direction, the approach is to use air-trench-isolation (ATI) between fins such that inter-fin spaces with air-gap in the active region become scalable. Along the channel direction, air-spacer between gate and S/D was adopted to reduce the parasitic capacitance. The scalable ATI FinFET exhibits better DC and RF performance as a result of huge increase of Ion and the reduction of Cgd. As a benchmark, in comparison to the conventional FinFET, we provide a guideline on designing much better improvement of the FinFET towards N3 technology node.
AB - Further improvement of FinFET has been demonstrated in the extension of the Moore's Law toward N3 technology and beyond. In the width direction, the approach is to use air-trench-isolation (ATI) between fins such that inter-fin spaces with air-gap in the active region become scalable. Along the channel direction, air-spacer between gate and S/D was adopted to reduce the parasitic capacitance. The scalable ATI FinFET exhibits better DC and RF performance as a result of huge increase of Ion and the reduction of Cgd. As a benchmark, in comparison to the conventional FinFET, we provide a guideline on designing much better improvement of the FinFET towards N3 technology node.
UR - http://www.scopus.com/inward/record.url?scp=85133967347&partnerID=8YFLogxK
U2 - 10.1109/EDTM53872.2022.9798277
DO - 10.1109/EDTM53872.2022.9798277
M3 - Conference contribution
AN - SCOPUS:85133967347
T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
SP - 15
EP - 17
BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 6 March 2022 through 9 March 2022
ER -