The ellipsometric measurements on SiO2 by intensity ratio technique

Yu Faye Chao*, C. S. Wei, W. C. Lee, S. C. Lin, Tien-Sheng Chao

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A PSA photometric ellipsometric technique is used to measure the ellipsometric parameters, ψ and Δ. Taking intensity ratios of A = I(π/4+dp,dA)/I(π4+dp/,π2+dA) and B = I(-π/4+dp,dA)/I(-π/4+dp,π/2+dA) to their first order approximation under small azimuth deviations of polarizer (dp) and analyzer (dA), we find that at fixed dA these two ratios have opposite gradient with respect to dp and intersect to each other at a special dp where A= B EQ tan2ψ, and the position of this dp is linearly related to cos Δ. For comparison, ψ and Δ of a SiO2/Si thin film are measured by conventional null ellipsometry and intensity ratio technique. An higher percentage error on Δ is expected for this PSA system. The source of errors will be discussed.

原文English
主出版物標題Proceedings of SPIE - The International Society for Optical Engineering
發行者Society of Photo-Optical Instrumentation Engineers
頁面171-180
頁數10
ISBN(列印)0819415898, 9780819415899
DOIs
出版狀態Published - 1994
事件Polarization Analysis and Measurement II - San Diego, CA, USA
持續時間: 25 7月 199427 7月 1994

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
2265
ISSN(列印)0277-786X

Conference

ConferencePolarization Analysis and Measurement II
城市San Diego, CA, USA
期間25/07/9427/07/94

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