The effects of off-axis substrate orientation on MOSFET characteristics

James Chung*, Jian Chen, Mark Levi, Ping Keung Ko, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The effects of off-axis substrate orientation on MOSFET performance and reliability are examined. As the <100> wafer is tilted off-axis around the <011> axis, two principal effects are observed. First, for current flow normal to the axis of rotation, inversion-layer mobility is lower than for current flow in the parallel direction. This mobility difference is due to anisotropy in the inversion-layer effective mass as well as increased surface roughness in the normal direction. Second, because surface roughness enhances nonuniform oxidation, thin spots in the gate oxide are generated which increase the susceptibility of the gate oxide to defect-related failure. The performance anisotropy may possibly be alleviated by rotating substrates in the <001> direction, such that the normal and parallel directions possess equivalent inversion-layer effective mass and degrees of surface roughness. The oxide quality may possibly be improved by using a two-step oxidation procedure, where an intermediate high-temperature anneal is used to smooth the oxide.

原文English
頁(從 - 到)633-636
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 12月 1989
事件1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
持續時間: 3 12月 19896 12月 1989

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