The effects of drain-bias on the threshold voltage instability in organic TFTs

Hsiao-Wen Zan*, Shin Chin Kao

*此作品的通信作者

研究成果: Article同行評審

31 引文 斯高帕斯(Scopus)

摘要

In this letter, the influence of drain bias on the threshold voltage instability in pentacene-based organic thin-film transistors (OTFTs) was studied. By applying different drain biases to adjust the channel carrier concentration in linear mode, the threshold voltage shift was found to be proportional to the carrier concentration. The experimental data can be well quantitatively explained by the drain bias-stress theory developed for a-Si TFTs. The outcome gives the insight of the degradation mechanism of OTFTs and is important for the design of OTFT pixel circuit, OTFT analog amplifiers, or OTFT active loads.

原文English
頁(從 - 到)155-157
頁數3
期刊IEEE Electron Device Letters
29
發行號2
DOIs
出版狀態Published - 1 2月 2008

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