The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi Keng Fu*, Ren Hao Jiang, Yu Hsuan Lu, Bo Chun Chen, Rong Xuan, Yen Hsiang Fang, Chia Feng Lin, Yan Kuin Su, Jenn-Fang Chen

*此作品的通信作者

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33 引文 斯高帕斯(Scopus)

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Physics & Astronomy