The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi Keng Fu*, Ren Hao Jiang, Yu Hsuan Lu, Bo Chun Chen, Rong Xuan, Yen Hsiang Fang, Chia Feng Lin, Yan Kuin Su, Jenn-Fang Chen

*此作品的通信作者

研究成果: Article同行評審

31 引文 斯高帕斯(Scopus)

摘要

The letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow.

原文English
文章編號121115
期刊Applied Physics Letters
98
發行號12
DOIs
出版狀態Published - 21 三月 2011

指紋

深入研究「The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy」主題。共同形成了獨特的指紋。

引用此