The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi Keng Fu; Ren Hao Jiang; Yu Hsuan Lu; Bo Chun Chen; Rong Xuan; Yen Hsiang Fang; Chia Feng Lin; Yan Kuin Su; Jenn-Fang Chen

doi:10.1063/1.3571440

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi Keng Fu^*, Ren Hao Jiang, Yu Hsuan Lu, Bo Chun Chen, Rong Xuan, Yen Hsiang Fang, Chia Feng Lin, Yan Kuin Su, Jenn-Fang Chen

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

33 引文斯高帕斯（Scopus）

摘要

The letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow.

原文	English
文章編號	121115
期刊	Applied Physics Letters
卷	98
發行號	12
DOIs	https://doi.org/10.1063/1.3571440
出版狀態	Published - 21 3月 2011

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10.1063/1.3571440

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Fu, Y. K., Jiang, R. H., Lu, Y. H., Chen, B. C., Xuan, R., Fang, Y. H., Lin, C. F., Su, Y. K., & Chen, J.-F. (2011). The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 98(12), 文章 121115. https://doi.org/10.1063/1.3571440

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title = "The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy",

abstract = "The letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow.",

author = "Fu, {Yi Keng} and Jiang, {Ren Hao} and Lu, {Yu Hsuan} and Chen, {Bo Chun} and Rong Xuan and Fang, {Yen Hsiang} and Lin, {Chia Feng} and Su, {Yan Kuin} and Jenn-Fang Chen",

year = "2011",

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day = "21",

doi = "10.1063/1.3571440",

language = "English",

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Fu, YK, Jiang, RH, Lu, YH, Chen, BC, Xuan, R, Fang, YH, Lin, CF, Su, YK & Chen, J-F 2011, 'The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy', Applied Physics Letters, 卷 98, 編號 12, 121115. https://doi.org/10.1063/1.3571440

TY - JOUR

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AU - Fu, Yi Keng

AU - Jiang, Ren Hao

AU - Lu, Yu Hsuan

AU - Chen, Bo Chun

AU - Xuan, Rong

AU - Fang, Yen Hsiang

AU - Lin, Chia Feng

AU - Su, Yan Kuin

AU - Chen, Jenn-Fang

PY - 2011/3/21

Y1 - 2011/3/21

N2 - The letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow.

AB - The letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow.

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VL - 98

JO - Applied Physics Letters

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The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

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