The effect of the geometry aspect ratio on the silicon ellipse-shaped surroundinggate field-effect transistor and circuit

Keyphrases

• Field-effect Transistors 100%
• Aspect Ratio 100%
• Surrounding Gate 75%
• High Performance 25%
• Electrical Characteristics 25%
• Simulation Techniques 25%
• MOSFET 25%
• Delay Time 25%
• Analog Circuits 25%
• Transient Response 25%
• Three-dimensional (3D) 25%
• Fabrication Methods 25%
• Transistor 25%
• Short Channel Effects 25%
• Gate Structure 25%
• Device Characteristics 25%
• Circuit Configuration 25%
• Gate Metal 25%
• Charge-discharge 25%
• Digital Applications 25%
• Nanodevices 25%
• 3-dB Bandwidth 25%
• Digital Circuits 25%
• Fall Time 25%
• Discharge Capability 25%
• Round Shape 25%
• Large Aspect Ratio 25%
• Unity Gain Bandwidth 25%
• Coupled Device-circuit Simulation 25%
• Surrounding-gate MOSFET (SGMOSFET) 25%

Engineering

• Field-Effect Transistor 100%
• Aspect Ratio 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 40%
• Limitations 40%
• Delay Time 20%
• Transient Analysis 20%
• Analog Circuit 20%
• Fall Time 20%
• Coupled Device 20%
• Db Bandwidth 20%
• Gain Bandwidth 20%
• Simulation Technique 20%
• Digital Electronics 20%

Material Science

• Silicon 100%
• Field Effect Transistor 100%
• Electronic Circuit 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 28%
• Transistor 14%
• Electrical Property 14%
• Nanodevice 14%
• Analogue Circuit 14%