The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

Chun Wang, Heng Tung Hsu, Jui Lung Lin, You Chen Weng, Yi Fan Tsao, Yuan Wang, Edward Yi Chang*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, the effect of barrier thickness on the DC and RF performances of AlGaN/GaN high-electron mobility transistors (HEMTs) on silicon for millimeter wave applications is experimentally investigated. GaN HEMT devices with different barrier thicknesses were fabricated and characterized. While the device with the thinnest barrier exhibited the highest extrinsic transconductance (gm) resulting from the shortest gate-to-channel distance, such configuration suffered from the lowest unit current-gain cut-off frequency (fT) due to the increase of the total gate capacitance. Moreover, degradation in the output power was observed for devices with thinner barriers. Such degradation was related to the severe knee walkout as evidenced from drain-lag characterization.

原文English
文章編號074004
期刊Semiconductor Science and Technology
38
發行號7
DOIs
出版狀態Published - 7月 2023

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