The Effect of Substrate Materials on Holding Time Degradation in MOS Dynamic RAM

H. Otsuka, K. Watanabe, H. Nishimura, H. Iwai, H. Nihira

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

The effect of substrate materials (bulk silicon, p/p+ epitaxial silicon, and intrinsic gettering silicon) on the holding time degradation of MOS dynamic RAM cells by excess minority carriers emitted from adjacent MOS devices was studied. It is shown that intrinsic gettering silicon has less susceptibility to holding time degradation than p/p+ epitaxial silicon, and much less than bulk silicon. The degradation mechanism is discussed in connection with the substrate materials.

原文English
頁(從 - 到)182-184
頁數3
期刊IEEE Electron Device Letters
3
發行號7
DOIs
出版狀態Published - 7月 1982

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