TY - JOUR
T1 - The Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetector
AU - Chen, Kuan Yu
AU - Hsu, Ching Chien
AU - Yu, Hsin-Chieh
AU - Peng, Yu Ming
AU - Yang, Chih Chiang
AU - Su, Yan Kuin
PY - 2018/4/10
Y1 - 2018/4/10
N2 - In this paper, amorphous indium-gallium-oxide solar-blind metal-semiconductor-metal photodetectors were fabricated by using co-sputtering method. Three samples with different oxygen concentrations, namely, sample A without oxygen, sample B with 2% oxygen concentration, and sample C with 4% oxygen concentration, were investigated. The applied bias was 5 V during device characterization. The ultraviolet (UV)-to-visible rejection ratios were 39, 9.9 × 103, and 1.1 × 105 for samples A, B, and C, respectively. The dynamic responses of the decay times were 5.79/52.12 s, 1.96/30.49 s, and 0.02/0.75 s for samples A, B, and C, respectively. In summary, the 4% oxygen concentration sample exhibited excellent UV-to-visible rejection ratio and superior decay time.
AB - In this paper, amorphous indium-gallium-oxide solar-blind metal-semiconductor-metal photodetectors were fabricated by using co-sputtering method. Three samples with different oxygen concentrations, namely, sample A without oxygen, sample B with 2% oxygen concentration, and sample C with 4% oxygen concentration, were investigated. The applied bias was 5 V during device characterization. The ultraviolet (UV)-to-visible rejection ratios were 39, 9.9 × 103, and 1.1 × 105 for samples A, B, and C, respectively. The dynamic responses of the decay times were 5.79/52.12 s, 1.96/30.49 s, and 0.02/0.75 s for samples A, B, and C, respectively. In summary, the 4% oxygen concentration sample exhibited excellent UV-to-visible rejection ratio and superior decay time.
KW - Indium-gallium-oxide (IGO)
KW - oxygen concentrations
KW - solar-blind photodetectors
UR - http://www.scopus.com/inward/record.url?scp=85045293119&partnerID=8YFLogxK
U2 - 10.1109/TED.2018.2817637
DO - 10.1109/TED.2018.2817637
M3 - Article
AN - SCOPUS:85045293119
SN - 0018-9383
VL - 65
SP - 1817
EP - 1822
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 5
ER -