The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs

Wen Jang Jiang, Meng Chyi Wu*, Hsin-Chieh Yu, Chun Yuan Huang, Chia Pin Sung, Jim Yong Chi

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this article, we report the effect of indium tin oxide (ITO) as a p-type ohmic contact for the 850 nm GaAs oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with ITO contact have a threshold current of 0.96 mA, a full-width-at-half-maximum angle of beam divergence of 27° and an ellipticity of 103.8% for the far-field pattern at a 10-mA driving current, which are the same as those of the conventional VCSELs with Au/Zn/Au or Ti/Pt/Au ohmic contacts. In addition, the VCSELs with ITO contact exhibit a light output power of 1.27 times in magnitude higher than those of the conventional VCSELs.

原文English
頁(從 - 到)1945-1948
頁數4
期刊Solid-State Electronics
46
發行號11
DOIs
出版狀態Published - 1 11月 2002

指紋

深入研究「The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs」主題。共同形成了獨特的指紋。

引用此