The effect of absorption layer of different quantum well arrangement on optoelectronic characteristics of nitride-based photovoltaic cells grown by MOCVD

Y. K. Fu, C. J. Tun, C. W. Kuo, Cheng-Huang Kuo*, C. J. Pan, G. C. Chi, M. C. Chen, H. F. Hong, S. M. Lan

*此作品的通信作者

研究成果: Article同行評審

摘要

In this study, III-nitride solar cells with multi-quantum well (MQW) absorption layer were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). The effect of different quantum well (QW) arrangement on optoelectronic characteristics of III-nitrides photovoltaic cells was investigated. It was found that the upper quantum well (QW) layer will dominate electroluminescence (EL) emission mechanism and the electrical characteristics of solar cell. The advantage of modulating the short-circuit current density (JSC) and open-circuit voltage (VOC) can be obtained by different arrangement of blue and green QW in MQW absorption layer. The optimum electrical characteristics of solar cell with a JSC of 0.30 mA/cm2, a VOC up to 1.51 V, fill factor (FF) as high as 0.601, and a series resistance (RS) of 9 Ω can be obtained by using MQW absorption layer.

原文English
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
6
發行號SUPPL. 2
DOIs
出版狀態Published - 1 7月 2009

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