The doping process of p-type GaN films

G. G. Chi*, Cheng-Huang Kuo, J. K. Sheu, C. J. Pan


研究成果: Conference article同行評審

14 引文 斯高帕斯(Scopus)


The formation of p-type GaN film is a key technology in developing optoelectronic devices. P-type doping (concentration ∼ 1017 cm-3) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The Hall measurement results indicate that Mg diffused GaN films also have p-type conductivity with carrier concentration about 1017 cm-3 and a mobility of 10 cm2 V-1 s-1. For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carrier concentrations. For Mg-diffused GaN, the PL spectra shows only a broad violet emission for samples diffused at 900-1100°C.

頁(從 - 到)210-213
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
出版狀態Published - 1 6月 2000
事件The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China
持續時間: 13 6月 199918 6月 1999


深入研究「The doping process of p-type GaN films」主題。共同形成了獨特的指紋。