The crystallization mechanism of poly-Si thin film using high-power Nd:YAG laser with gaussian beam profile

Hsiao-Wen Zan*, Chang Yu Huang, Kazuya Saito, Kouichi Tamagawa, Jack Chen, Tung Jung Wu

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper studies the poly-Si crystallization mechanism under the high power (200 W) Nd:YAG solid state pulsed laser annealing system. It is found that the Gaussian-distributed laser beam profile successfully produce large super lateral growth process window. The devices in the SLG process window exhibit an electron field-effect mobility around 250 cm2/V.s and a threshold voltage lower than 1 V. The influence of a-Si film thickness and the laser scan pitch on the process window is also carefully investigated.

原文English
主出版物標題Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
頁面335-340
頁數6
DOIs
出版狀態Published - 12 6月 2007
事件2006 MRS Spring Meeting - San Francisco, CA, United States
持續時間: 17 4月 200621 4月 2006

出版系列

名字Materials Research Society Symposium Proceedings
910
ISSN(列印)0272-9172

Conference

Conference2006 MRS Spring Meeting
國家/地區United States
城市San Francisco, CA
期間17/04/0621/04/06

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