The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

W. C. Lai; Y. S. Huang; Y. W. Yen; J. K. Sheu; T. H. Hsueh; Cheng-Huang Kuo; S. J. Chang

doi:10.1002/pssc.200778559

The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

W. C. Lai, Y. S. Huang, Y. W. Yen, J. K. Sheu, T. H. Hsueh, Cheng-Huang Kuo, S. J. Chang

照明與能源光電研究所

研究成果: Conference article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.

原文	English
頁（從 - 到）	1639-1641
頁數	3
期刊	Physica Status Solidi (C) Current Topics in Solid State Physics
卷	5
發行號	6
DOIs	https://doi.org/10.1002/pssc.200778559
出版狀態	Published - 1 12月 2008
事件	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, 美國持續時間: 16 9月 2007 → 21 9月 2007

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10.1002/pssc.200778559

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@article{3b66dbfc0dd54733b34ee501dd44f3f5,

title = "The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers",

abstract = "We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.",

author = "Lai, {W. C.} and Huang, {Y. S.} and Yen, {Y. W.} and Sheu, {J. K.} and Hsueh, {T. H.} and Cheng-Huang Kuo and Chang, {S. J.}",

year = "2008",

month = dec,

day = "1",

doi = "10.1002/pssc.200778559",

language = "English",

volume = "5",

pages = "1639--1641",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "6",

note = "7th International Conference of Nitride Semiconductors, ICNS-7 ; Conference date: 16-09-2007 Through 21-09-2007",

}

TY - JOUR

T1 - The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

AU - Lai, W. C.

AU - Huang, Y. S.

AU - Yen, Y. W.

AU - Sheu, J. K.

AU - Hsueh, T. H.

AU - Kuo, Cheng-Huang

AU - Chang, S. J.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.

AB - We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.

UR - http://www.scopus.com/inward/record.url?scp=67649147086&partnerID=8YFLogxK

U2 - 10.1002/pssc.200778559

DO - 10.1002/pssc.200778559

M3 - Conference article

AN - SCOPUS:67649147086

SN - 1862-6351

VL - 5

SP - 1639

EP - 1641

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 6

T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

Y2 - 16 September 2007 through 21 September 2007

ER -

The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

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