The characterization of stacked α-Si/SiGe/α-Si sensing membrane

Chia Ming Yang; Chao Sung Lai; Chih Yao Wang; Cheng En Lue; Jung Chung Chou; Wen Yaw Chung; Dorota G. Pijanowska

doi:10.1016/j.mee.2005.04.041

The characterization of stacked α-Si/SiGe/α-Si sensing membrane

Chia Ming Yang^*, Chao Sung Lai, Chih Yao Wang, Cheng En Lue, Jung Chung Chou, Wen Yaw Chung, Dorota G. Pijanowska

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研究成果: Conference article › 同行評審

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摘要

In this work, the stacked α-Si/SiGe/α-Si film was first used as ion sensing membrane of Electrolyte-Insulator-Semiconductor. All sensing membranes were deposited in low pressure chemical vapor deposition with GeH ₄ and Si₂H₆ mixtures. Comparing to α-Si sensing membrane, the characteristics of the α-Si/SiGe/α-Si sensing membrane were studied including pH sensitivity and drift phenomena. The pH sensitivity of α-Si/SiGe/α-Si and α-Si EIS was 83.1 ± 2.1 and 76.8 ± 2.2mV/pH, respectively. However, the drift voltage was a little large and resulted in the unstable sensitivity. A physical model was proposed for the unstable sensitivity phenomena. This unstable phenomenon was eliminated by baking treatment.

原文	English
頁（從 - 到）	46-49
頁數	4
期刊	Microelectronic Engineering
卷	80
發行號	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.041
出版狀態	Published - 17 6月 2005
事件	14th Biennial Conference on Insulating Films on Semiconductors - 持續時間: 22 6月 2005 → 24 6月 2005

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10.1016/j.mee.2005.04.041

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title = "The characterization of stacked α-Si/SiGe/α-Si sensing membrane",

abstract = "In this work, the stacked α-Si/SiGe/α-Si film was first used as ion sensing membrane of Electrolyte-Insulator-Semiconductor. All sensing membranes were deposited in low pressure chemical vapor deposition with GeH 4 and Si2H6 mixtures. Comparing to α-Si sensing membrane, the characteristics of the α-Si/SiGe/α-Si sensing membrane were studied including pH sensitivity and drift phenomena. The pH sensitivity of α-Si/SiGe/α-Si and α-Si EIS was 83.1 ± 2.1 and 76.8 ± 2.2mV/pH, respectively. However, the drift voltage was a little large and resulted in the unstable sensitivity. A physical model was proposed for the unstable sensitivity phenomena. This unstable phenomenon was eliminated by baking treatment.",

keywords = "Electrolyte-Insulator-Semiconductor, Sensitivity, Silicon Germanium",

author = "Yang, {Chia Ming} and Lai, {Chao Sung} and Wang, {Chih Yao} and Lue, {Cheng En} and Chou, {Jung Chung} and Chung, {Wen Yaw} and Pijanowska, {Dorota G.}",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.041",

language = "English",

volume = "80",

pages = "46--49",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "SUPPL.",

note = "14th Biennial Conference on Insulating Films on Semiconductors ; Conference date: 22-06-2005 Through 24-06-2005",

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TY - JOUR

T1 - The characterization of stacked α-Si/SiGe/α-Si sensing membrane

AU - Yang, Chia Ming

AU - Lai, Chao Sung

AU - Wang, Chih Yao

AU - Lue, Cheng En

AU - Chou, Jung Chung

AU - Chung, Wen Yaw

AU - Pijanowska, Dorota G.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - In this work, the stacked α-Si/SiGe/α-Si film was first used as ion sensing membrane of Electrolyte-Insulator-Semiconductor. All sensing membranes were deposited in low pressure chemical vapor deposition with GeH 4 and Si2H6 mixtures. Comparing to α-Si sensing membrane, the characteristics of the α-Si/SiGe/α-Si sensing membrane were studied including pH sensitivity and drift phenomena. The pH sensitivity of α-Si/SiGe/α-Si and α-Si EIS was 83.1 ± 2.1 and 76.8 ± 2.2mV/pH, respectively. However, the drift voltage was a little large and resulted in the unstable sensitivity. A physical model was proposed for the unstable sensitivity phenomena. This unstable phenomenon was eliminated by baking treatment.

AB - In this work, the stacked α-Si/SiGe/α-Si film was first used as ion sensing membrane of Electrolyte-Insulator-Semiconductor. All sensing membranes were deposited in low pressure chemical vapor deposition with GeH 4 and Si2H6 mixtures. Comparing to α-Si sensing membrane, the characteristics of the α-Si/SiGe/α-Si sensing membrane were studied including pH sensitivity and drift phenomena. The pH sensitivity of α-Si/SiGe/α-Si and α-Si EIS was 83.1 ± 2.1 and 76.8 ± 2.2mV/pH, respectively. However, the drift voltage was a little large and resulted in the unstable sensitivity. A physical model was proposed for the unstable sensitivity phenomena. This unstable phenomenon was eliminated by baking treatment.

KW - Electrolyte-Insulator-Semiconductor

KW - Sensitivity

KW - Silicon Germanium

UR - http://www.scopus.com/inward/record.url?scp=19944396502&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2005.04.041

DO - 10.1016/j.mee.2005.04.041

M3 - Conference article

AN - SCOPUS:19944396502

SN - 0167-9317

VL - 80

SP - 46

EP - 49

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - SUPPL.

T2 - 14th Biennial Conference on Insulating Films on Semiconductors

Y2 - 22 June 2005 through 24 June 2005

ER -

The characterization of stacked α-Si/SiGe/α-Si sensing membrane

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