The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode

Wen Tai Lu*, Po Ching Lin, Tiao Yuan Huang, Chao-Hsin Chien, Ming Jui Yang, Ing Jyi Huang, Peer Lehnen

*此作品的通信作者

研究成果: Article同行評審

41 引文 斯高帕斯(Scopus)

摘要

The characteristics of charge trapping during constant voltage stress in an n-type metal-oxide-semiconductor capacitor with HfO2/SiO2 gate stack and TiN gate electrode were studied. We found that the dominant charge trapping mechanism in the high-k gate stack is hole trapping rather than electron trapping. This behavior can be well described by the distributed capture cross-section model. In particular, the flatband voltage shift (ΔVfb) is mainly caused by the trap filling instead of the trap creation [Zafar et al., J. Appl. Phys. 93, 9298 (2003)]. The dominant hole trapping can be ascribed to a higher probability for hole tunneling from the substrate, compared to electron tunneling from the gate, due to a shorter tunneling path over the barrier for holes due to the work function of the TiN gate electrode.

原文English
頁(從 - 到)3525-3527
頁數3
期刊Applied Physics Letters
85
發行號16
DOIs
出版狀態Published - 18 10月 2004

指紋

深入研究「The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode」主題。共同形成了獨特的指紋。

引用此