The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

M. H. Liu, Y. H. Wang, M. P. Houng, Jenn-Fang Chen, A. Y. Cho

研究成果: Paper同行評審

摘要

The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

原文English
頁面3.6.26-3.6.29
頁數4
DOIs
出版狀態Published - 12 7月 1994
事件1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
持續時間: 12 7月 199415 7月 1994

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區Taiwan
城市Hsinchu
期間12/07/9415/07/94

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