@inproceedings{f70803f87b024bff9fb757036f3d0d47,
title = "The anomalous electrical performance of bonded N-GAAS wafers",
abstract = "Electrical performance was found to be closely related to the variation of nanosized interface morphology. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850 °C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700 °C behaves to deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700 °C. The reason will be discussed based on the analysis of autocorrelation function from HRTEM (high-resolution transmission electron microscope) and energy dispersive x-ray spectroscopy.",
author = "Hao Ouyang and Chiou, {Hsiao Hao} and Liu, {Chia Cheng} and Cheng, {Ji Hao} and Yew-Chuhg Wu",
year = "2007",
month = dec,
day = "1",
doi = "10.1149/1.2731169",
language = "English",
isbn = "9781566775519",
series = "ECS Transactions",
number = "2",
pages = "41--43",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}