TFT materials and devices

Po Tsun Liu

doi:10.1016/B978-0-12-803581-8.09624-7

TFT materials and devices

Po Tsun Liu^*

^*此作品的通信作者

光電工程學系

研究成果: Chapter › 同行評審

1 引文斯高帕斯（Scopus）

摘要

TFT devices play a role of conducting electric current to charge the LC capacitor and storage capacitor, acting as an electric current driver to light “on” and “off” the OLED pixel besides a switch. A TFT device structure comprises several material layers, including metallic gate electrode, gate dielectric film, semiconductor channel, and source/drain electrodes, which is similar to metal-oxide-semiconductor field effect transistor (MOSFET). The details of TFT design, materials, fabrication and applications will be discussed for their respect usages.

原文	English
主出版物標題	Encyclopedia of Modern Optics
發行者	Elsevier
頁面	12-16
頁數	5
卷	1-5
ISBN（電子）	9780128149829
ISBN（列印）	9780128092835
DOIs	https://doi.org/10.1016/B978-0-12-803581-8.09624-7
出版狀態	Published - 1 1月 2018

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10.1016/B978-0-12-803581-8.09624-7

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引用此

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AB - TFT devices play a role of conducting electric current to charge the LC capacitor and storage capacitor, acting as an electric current driver to light “on” and “off” the OLED pixel besides a switch. A TFT device structure comprises several material layers, including metallic gate electrode, gate dielectric film, semiconductor channel, and source/drain electrodes, which is similar to metal-oxide-semiconductor field effect transistor (MOSFET). The details of TFT design, materials, fabrication and applications will be discussed for their respect usages.

KW - A-Si:H TFT

KW - AOS TFT

KW - Device reliability

KW - Field-effect mobility

KW - Leakage current

KW - OTFT

KW - On-state current

KW - Poly-Si TFT

KW - Subthreshold

KW - Thin film transistor

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VL - 1-5

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EP - 16

BT - Encyclopedia of Modern Optics

PB - Elsevier

ER -

TFT materials and devices

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