Testing methods for a write-assist disturbance-free dual-port SRAM

Hao Yu Yang, Chen Wei Lin, Chao Ying Huang, Ching Ho Lu, Chen An Lai, Chia-Tso Chao, Rei Fu Huang

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

The recent research works of dual-port SRAM have focused on developing new write-assist techniques to suppress the potential inter-port write disturbance under low operating voltage and high process variation. However, the testing related issues induced by those newly proposed write-assist techniques have not been discussed yet in the previous literatures. In this paper, we first implemented a new write-assist dual-port SRAM proposed in [10] by using a 28nm LP process and then discussed the faulty behavior of injecting different resistive-open defects into both the SRAM cell and write-assist circuit. Next, we developed new test methods to detect the hard-to-detect resistive-open defects and proposed a corresponding March-like algorithm that covers a widely used March C- as well as the proposed test methods. Last, the required DfT for the proposed test methods was also discussed.

原文English
主出版物標題Proceedings - 2014 IEEE 32nd VLSI Test Symposium, VTS 2014
發行者IEEE Computer Society
ISBN(列印)9781479926114
DOIs
出版狀態Published - 2014
事件2014 IEEE 32nd VLSI Test Symposium, VTS 2014 - Napa, CA, United States
持續時間: 13 4月 201417 4月 2014

出版系列

名字Proceedings of the IEEE VLSI Test Symposium

Conference

Conference2014 IEEE 32nd VLSI Test Symposium, VTS 2014
國家/地區United States
城市Napa, CA
期間13/04/1417/04/14

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