Different test structures used to investigate the electrostatic discharge (ESD) robustness of on-glass device in Low Temperature Poly-Si (LTPS) process are proposed in this paper. The transmission line pulse generator (TLPG) is used to monitor the I-V behaviors of on-glass devices in the high-current region, and to evaluate the robustness of those LTPS devices during ESD stress condition. Finally, a successful ESD protection design with P + -i-N + diodes and a VDD-to-VSS ESD clamp circuit integrated on a LCD panel has been demonstrated with a machine-model (MM) ESD level of up to 275 V, whereas the traditional one only can sustain 100 V MM ESD stress.
|出版狀態||Published - 3月 2004|
|事件||Proceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004) - Awaji, Japan|
持續時間: 22 3月 2004 → 25 3月 2004
|Conference||Proceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004)|
|期間||22/03/04 → 25/03/04|