This work presents a means of causing mechanical uniaxial stress in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed method provided a valuable reference for research into both strained-Si and the temperature effect. In this article, tensile stress is applied parallel or perpendicular to the channel direction at room and high temperature. The shift in the energy levels of strained silicon depends on the direction of uniaxial strain, and changes the average in-plane transport mass.
|頁（從 - 到）||G276-G278|
|期刊||Electrochemical and Solid-State Letters|
|出版狀態||Published - 7 6月 2006|