摘要
This study investigates the temperature-dependent decay dynamics in highly mismatched ZnSe 0.950Te 0.050 alloy using photoluminescence (PL) and time-resolved PL spectroscopy. The PL peak energy exhibits a V-shaped dependence on temperature (10-300 K), indicating strong carrier localization. Kohlrausch's stretched exponential law, in which the deduced stretching exponent is highly consistent with the V-shaped PL peak shift, closely corresponds to the complex decay curves over a wide temperature range. Additionally, the PL lifetime initially increases and then monotonically declines as the temperature increases. These findings agree excellently with the low electron-hole binding energy upon thermal ionization of weakly bound electrons.
原文 | English |
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文章編號 | 071912 |
頁(從 - 到) | 1-4 |
頁數 | 4 |
期刊 | Applied Physics Letters |
卷 | 100 |
發行號 | 7 |
DOIs | |
出版狀態 | Published - 13 2月 2012 |