Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

I. Liang Chen; Wei Chou Hsu; Tsin Dong Lee; Ke Hua Su; Chih Hung Chiou; Kuo-Jui Lin

doi:10.1088/0268-1242/21/7/011

Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

I. Liang Chen^*, Wei Chou Hsu, Tsin Dong Lee, Ke Hua Su, Chih Hung Chiou, Kuo-Jui Lin

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摘要

Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.

原文	English
文章編號	011
頁（從 - 到）	886-889
頁數	4
期刊	Semiconductor Science and Technology
卷	21
發行號	7
DOIs	https://doi.org/10.1088/0268-1242/21/7/011
出版狀態	Published - 30 5月 2006

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10.1088/0268-1242/21/7/011

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title = "Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm",

abstract = "Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.",

author = "Chen, {I. Liang} and Hsu, {Wei Chou} and Lee, {Tsin Dong} and Su, {Ke Hua} and Chiou, {Chih Hung} and Kuo-Jui Lin",

year = "2006",

month = may,

day = "30",

doi = "10.1088/0268-1242/21/7/011",

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T1 - Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

AU - Chen, I. Liang

AU - Hsu, Wei Chou

AU - Lee, Tsin Dong

AU - Su, Ke Hua

AU - Chiou, Chih Hung

AU - Lin, Kuo-Jui

PY - 2006/5/30

Y1 - 2006/5/30

N2 - Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.

AB - Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 νm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 νm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.

UR - http://www.scopus.com/inward/record.url?scp=33745245051&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/7/011

DO - 10.1088/0268-1242/21/7/011

M3 - Article

AN - SCOPUS:33745245051

SN - 0268-1242

VL - 21

SP - 886

EP - 889

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 011

ER -

Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

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