摘要
In this paper, the temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage (DT) MOSFET (-25 to 125°C) are examined under different bias points. The temperature effects on the intrinsic small-signal parameters and body-related parasitics are also investigated. Moreover, along with our proposed expressions for the cut-off and maximum oscillation frequencies (ft and fmax), the impact of these intrinsic parameters and parasitics on the temperature behaviors of the DT MOSFET's RF performance can be well captured and described.
原文 | English |
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主出版物標題 | European Microwave Week 2009, EuMW 2009 |
主出版物子標題 | Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 |
頁面 | 69-72 |
頁數 | 4 |
出版狀態 | Published - 10月 2009 |
事件 | European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, 意大利 持續時間: 28 9月 2009 → 2 10月 2009 |
出版系列
名字 | European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 |
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Conference
Conference | European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 |
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國家/地區 | 意大利 |
城市 | Rome |
期間 | 28/09/09 → 2/10/09 |