Temperature dependence of thin-film transistors electrical characteristics with multiple nano-wire channels

Che Yu Yang*, Yung Chun Wu, Ting Chang Chang, Po-Tsun Liu, Chi Shen Chen, Chun Hao Tu, Chun Yen Chang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We have investigated the temperature dependent electrical characteristics of lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths from 25°C to 175°C. The ten 67 nm-wide split channels TFT has best transfer characteristics, because of it's robust trigate control and grain boundary defects is the lowest, due to its split nano-wires structure with effective NH3 plasma passivation.

原文English
主出版物標題Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
編輯H.P. David Shieh, F.C. Chen
頁面500-502
頁數3
出版狀態Published - 2月 2005
事件International Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
持續時間: 21 2月 200524 2月 2005

出版系列

名字International Display Manufacturing Conference and Exhibition, IDMC'05

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
國家/地區Japan
城市Taipei
期間21/02/0524/02/05

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