Temperature dependence of emitter-base reverse stress degradation and its mechanism analyzed by MOS structures

Hisayo Sasaki Momose*, Youichiro Niitsu, Hiroshi Iwai, Kenji Maeguchi

*此作品的通信作者

研究成果: Paper同行評審

10 引文 斯高帕斯(Scopus)

摘要

Different degradation modes were observed under high and low reverse stress current conditions. The temperature dependence of the degradation was studied, and it was found that the degradation is greatest around 50°C. The mechanisms of the degradation and its recovery were also investigated, using MOS structures and simulation. MOSFET evaluation indicated that electron trapping and interface state generation occur during the stress. Simulation confirmed that the degradation is caused mainly by the interface states generated in the oxide near the emitter-base junction.

原文English
頁面140-143
頁數4
出版狀態Published - 1989
事件Proceedings of the 1989 Bipolar Circuits and Technology Meeting - Minneapolis, MN, USA
持續時間: 18 九月 198919 九月 1989

Conference

ConferenceProceedings of the 1989 Bipolar Circuits and Technology Meeting
城市Minneapolis, MN, USA
期間18/09/8919/09/89

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