Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

Ting Chou Lu; Hsiao-Wen Zan; Ming-Dou Ker; Wei Ming Huang; Kun Chih Lin; Ching Chieh Shin; Chao Chian Chiu; Chun Ting Liu

doi:10.1889/1.3069413

Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

Ting Chou Lu^*
, Hsiao-Wen Zan
, Ming-Dou Ker
, Wei Ming Huang
, Kun Chih Lin
, Ching Chieh Shin
, Chao Chian Chiu
, Chun Ting Liu

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.

原文	English
頁（從 - 到）	1410-1413
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	39
發行號	3
DOIs	https://doi.org/10.1889/1.3069413
出版狀態	Published - 30 10月 2008
事件	2008 SID International Symposium - Los Angeles, CA, 美國持續時間: 20 5月 2008 → 21 5月 2008

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10.1889/1.3069413

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title = "Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit",

abstract = "The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.",

author = "Lu, \{Ting Chou\} and Hsiao-Wen Zan and Ming-Dou Ker and Huang, \{Wei Ming\} and Lin, \{Kun Chih\} and Shin, \{Ching Chieh\} and Chiu, \{Chao Chian\} and Liu, \{Chun Ting\}",

year = "2008",

month = oct,

day = "30",

doi = "10.1889/1.3069413",

language = "English",

volume = "39",

pages = "1410--1413",

journal = "Digest of Technical Papers - SID International Symposium",

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note = "2008 SID International Symposium ; Conference date: 20-05-2008 Through 21-05-2008",

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TY - JOUR

T1 - Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

AU - Lu, Ting Chou

AU - Zan, Hsiao-Wen

AU - Ker, Ming-Dou

AU - Huang, Wei Ming

AU - Lin, Kun Chih

AU - Shin, Ching Chieh

AU - Chiu, Chao Chian

AU - Liu, Chun Ting

PY - 2008/10/30

Y1 - 2008/10/30

N2 - The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.

AB - The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.

UR - https://www.scopus.com/pages/publications/54549102087

U2 - 10.1889/1.3069413

DO - 10.1889/1.3069413

M3 - Conference article

AN - SCOPUS:54549102087

SN - 0097-966X

VL - 39

SP - 1410

EP - 1413

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 3

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

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