Temperature coefficient of diode-connected LTPS Poly-si TFTs and its application on the bandgap reference circuit

Ting Chou Lu*, Hsiao-Wen Zan, Ming-Dou Ker, Wei Ming Huang, Kun Chih Lin, Ching Chieh Shin, Chao Chian Chiu, Chun Ting Liu

*此作品的通信作者

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195ppm/°C, between 25 °C and 125 °C.

原文English
頁(從 - 到)1410-1413
頁數4
期刊Digest of Technical Papers - SID International Symposium
39
發行號3
DOIs
出版狀態Published - 30 10月 2008
事件2008 SID International Symposium - Los Angeles, CA, United States
持續時間: 20 5月 200821 5月 2008

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